Abstract
AbstractNanoporous graphene (NPG) exhibits an apparent semiconductivity to solve the zero‐gap problem of graphene and also offers multifunctionalities that are directly associated with its structural and chemical nature. However, reliable, low‐cost, and large‐scale production of NPG is a major challenge for its practical applications. Here, a high‐performance resistive‐switching memory cell based on biomass‐derived NPG materials is demonstrated for the first time. A new processing method is suggested to create 3D NPG starting from Saccharum officinarum. The fabricated Au/NPG/Au two‐terminal devices achieve an excellent electrical performance characterized by an operating voltage below 5 V and an ON/OFF current ratio of over 106. A range of materials and device characterizations reveal the oxygen ion migration and charge‐injection modulation as a key mechanism behind the observed memory behaviors. This unconventional approach to high‐performance memory devices is an important step toward sustainable electronics and intelligent technologies.
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