Abstract
To fabricate a reliable device using Cu interconnect technology, it is important to form an initial pattern profile with a good sidewall surface roughness at via bottom due to barrier step coverage issues. However, if Ar sputter etch clean is used at via contact clean prior to barrier deposition, this induces a Cu redeposition on the via sidewall. This redeposited Cu can lead to the degradation by sidewall morphology and finally the reliability issues due to poor barrier step coverage. In this study, we evaluate the reactive preclean process (RPC) as an alternative technology to overcome the disadvantages of sputter clean and discuss the effectiveness of RPC on the removal of Cu oxide in Cu dual damascene interconnect.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
