Binäre Lanthan‐Stannide mit Sn:La‐Verhältnissen nahe 1:1 – Synthesen, Kristallstrukturen, Chemische Bindung

Abstract

AbstractFour binary lanthanum stannides close to the 1:1 ratio of Sn:La were synthesized from mixtures of the elements. The structures of the compounds have been determined by means of single‐crystal X‐ray data. The low temperature (α) form of LaSn (CrB‐type, orthorhombic, space group Cmcm, a = 476.33(6), b = 1191.1(2), c = 440.89(6) pm, Z = 4, R1 = 0.0247), crystallizes with the CrB‐type. The structure exhibits planar tin zigzag chains with a Sn–Sn bond length of 299.1 pm. In contrast to the electron precise Zintl compounds of the alkaline earth elements, additional La–Sn bonding contributions become apparent from the results of band structure calculations. In the somewhat tin‐richer region, the new compound La3Sn4 (orthorhombic, space group Cmcm, a = 451.45(4), b = 1190.44(9), c = 1583.8(2) pm, Z = 4, R1 = 0.0674), crystallizing with the Er3Ge4 structure type, exhibits Sn3 segments of the zigzag chains of α‐LaSn together with a further Sn atom in a square planar Sn coordination with increased Sn–Sn bond lengths. In the Lanthanum‐richer region, La11Sn10 (tetragonal, space group I4/mmm, a = 1208.98(5), c = 1816.60(9) pm, Z = 4, R1 = 0.0325) forms the undistorted tetragonal Ho11Ge10 structure type. Its structure, which contains isolated Sn atoms, [Sn2] dumbbells and planar [Sn4] rings is related to the high temperature (β) form of LaSn. The structure of β‐LaSn (space group Cmmm, a = 1766.97(6), b = 1768.28(5), c = 1194.32(3) pm, Z = 60, R1 = 0.0453), which forms a singular structure type, can be derived from that of La11Sn10 by the removal of thin slabs. Due to the different stacking of the remaining layers, planar [Sn4] chain segments and linear [Sn–Sn–Sn] anions are formed as additional structural elements. The chemical bonding (Sn–Sn covalent bonding, Sn–La contributions) is discussed on the basis of the simple Zintl concept and the results of FP‐LAPW calculations (density of states, band structure, valence electron densities and electron localization function).