Binding to deep impurities in semiconductors

Abstract

Describes a method which makes it possible to perform impurity calculations in such a way that both short- and long-range terms are accounted for in an accurate manner. The authors show that the tail of the long-range Coulomb term in the impurity potential associated with a majority of deep defects in semiconductors constitutes a contribution to the binding energy of approximately 0.1 eV and can be added by perturbation theory.