Binding to Chemical Impurities in Semiconductors

Abstract

The problem of impurity states in semiconductors is formulated assuming the knowledge of the unperturbed crystal. The strong dependence of shallow impurity states on the dielectric response function and on the band structure of the host semiconductor are analyzed within the effective-mass point-charge model. The long range part and the short range part of the impurity potential are discussed in detail. Recent binding-energy calculations for isoelectronic traps and shallow charged impurities are reviewed.