Abstract
The binding energy of quasi-two-dimensional electron–hole liquid (EHL) at zero temperature is calculated for type-II (GaAs) m /(AlAs) m (5 ≤ m ≤13) quantum wells (QWs). The correlation energy is evaluated by adopting a random phase approximation of Hubbard. For comparison, we calculate the binding energy of EHL for type-I (GaAs) m /(AlAs) m (14 ≤ m ≤20) QWs. It is demonstrated that the EHL in type-II GaAs/AlAs QWs is more stable state than exciton and biexciton at high excitation density, while the EHL is unstable in type-I GaAs/AlAs QWs.
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