Binding energy of Sb-related complex in p-doped ZnO film

Abstract

ZnO and Sb-doped ZnO films were grown on (001) sapphire using metal organic chemical vapor deposition (MOCVD). Diethylzinc (DEZn), trimethylantimony (TMSb) and oxygen were used as the Zn, Sb and oxygen sources, respectively. The reaction mechanism of DEZn and oxygen was investigated. The formation of the SbZn–2VZn acceptor complex is explained, and the effect of the Sb chemical state on the conduction type is discussed. In the low-temperature spectrum of the Sb-doped ZnO film, emissions associated with acceptors, such as the acceptor-bound exciton (3.319 eV) and the transition between free electrons and acceptors (3.244 eV), were observed, which proved the creation of the SbZn–2VZn acceptor complex. According to the energy level of the transition between the free electrons and acceptors, the acceptor binding energy was calculated to be 0.19 eV. Meanwhile, by fitting the integral photoluminescence intensity versus the temperature function, the acceptor binding energy was also estimated and was similar to the calculated value.