Abstract
The binding energy of shallow hydrogenic impurities in spherical quantum dots (QDs) with parabolic confinement is calculated, using a variational approach within the effective mass approximation. The binding energy is computed for GaAs QD as a function of the dot size for different impurity positions, and also as a function of the impurity position for different dot sizes. The results show that the impurity binding energy increases with the reduction in the dot dimension. The binding energy is also found to depend on the location of the impurity, and the same is the maximum for the on-center impurity.
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