Abstract
The binding energy of a hydrogen-like impurity in a thin size-quantized wire of A 3 B 5 -type semiconductors with Kane's dispersion law has been calculated as a function of the radius of the wire and the location of the impurity with respect to the axis of the wire, using a variational approach. It is shown that when the wire radius is less than the Bohr radius of the impurity, the nonparabolicity of the dispersion law of charge carriers leads to a considerable increase of the binding energy.
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