Abstract
A formulation is presented to find the electronic states of a D− centre in a many-valley semiconductor. Parameterizing the intervalley scattering terms and using a model potential in the central cell region the D− binding energies in Si and Ge doped with group V elements are calculated variationally, including electron correlation. The binding energy obtained for Si : P and Ge : Sb are in good agreement with experimental results. D− formed by As donors appears to require a more detailed consideration for the central cell potential.
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