Binding Energy of Biexcitons in GaAs Quantum-Well Wires

Abstract

The binding energy of a biexciton in GaAs quantum-wellwires is calculated variationally by use of a two-parameter trial wavefunction and a one-dimensional equivalent potential model. There is noartificial parameter added in our calculation. Our results agree fairlywell with the previous results. It is found that the binding energiesare closely correlative to the size of wire. The binding energy ofbiexcitons is smaller than that of neutral bound excitons inGaAs quantum-well wires when the dopant is located at the centre of thewires.