Binding energies of shallow donor impurities in different shaped quantum wells under an applied electric field

Abstract

We present a variational method to compute the binding energies for a hydrogenic impurity located at the center of the finite parabolic (PQW), V-shaped (VQW or full graded well) and square (SQW) GaAs–Ga 1− x Al x As quantum wells under the electric field. The dependence of the ground state impurity binding energy on the applied electric field, the geometric shape of the quantum wells and well width is discussed together with the polarization effect.