Binding energies of D0 impurity in CdTe/ZnTe spherical quantum dot

Abstract

Binding energies in spherical semiconductor quantum dot (QD) are investigated in this paper. Energy spectrum calculations are performed under effective mass approximation by assuming spherically symmetric confining potential of finite depth. We examined electronic structure of one-electron QD without impurity and with impurity in the center (D0). On the basis of the analytical solutions the Schrödinger and Poisson equations, energies of states and corresponding wave functions are determined. We examined the particular case of CdTe/ZnTe QD. We calculated binding energies for the first three s, p, d, f and g states. The effects of increasing dot size on the binding energy of examined states for CdTe/ZnTe QD are presented.