Abstract

This work describes design process toward fully analogue binary memory where two coupled piecewise-linear (PWL) resistors are implemented using novel network topology with the voltage gain amplifiers (VGA). These versatile active devices allow slopes of individual segments of ampere-voltage (AV) characteristics associated with PWL two-terminals to be electronically adjustable via the external DC voltage. Numerical analysis of designed binary memory cell covers all mandatory parts: phase portraits, calculation of the largest Lyapunov exponent (LLE), basins of attraction for the typical strange attractors, and high-resolution circuit-oriented bifurcation sequences. A transition from the stable states toward chaotic regime through metastability is proved via real measurement. The robustness of the generated chaotic attractors is verified by captured oscilloscope screenshots.

Highlights

  • It is well known that isolated dynamical systems having at least three degrees of freedom can exhibit irregular, continuous, scalable, random-like behaviour denoted as deterministic chaos

  • As one of the possible solutions associated with a given set of differential equations, can be understood as universal phenomena

  • It means that physical interpretation of individual state variables and internal system parameters are not important

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Summary

INTRODUCTION

It is well known that isolated dynamical systems having at least three degrees of freedom can exhibit irregular, continuous, scalable, random-like behaviour denoted as deterministic chaos. Chaotic system generates waveform that is sensitive to small changes of initial conditions, contains continuous scale of periodic signals, provides bounded strange attractor with a non-integer geometric dimension, generates dense strange attractors, chaotic waveforms have increased entropy, etc This facts have been demonstrated in through hundreds of dynamical systems among all fields and research branches of physics; for example in classical mechanics [1]–[3], while describing chemical reactions [4], [5] and fluid dynamics [6], [7], in simplified population growth models [8], climate model analysis [9]–[11], in optics [12], [13] and, analogue electronics. Open research areas are suggested and concluding remarks are stated; where overall properties of developed chaotic memory are summarized

MATHEMATICAL MODEL OF MEMORY
A1 R1C1
DESCRIPTION OF PWL BUILDING BLOCK
RESULTS AND DISCUSSION
CONCLUSIONS

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