Abstract
In this work, bilayer self-rectified memristors for highly scalable memory arrays have been realized in bilayer stacked structures for suppressing the sneak path current without an additional switch device integration. This is a groundbreaking development for high-density storage memory applications. The programmable reconfigurations and operational polarities on self-rectified memristor with temperature response on dielectric fusing phenomena with the impact of electrode thermal conductivity have been investigated. The nonlinear bifunctional memristor with low voltage dielectric fusing operation is also presented for reprogrammable read-only memory applications as the future features for security in artificial intelligence and internet hardware systems.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callSimilar Papers
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
