Abstract
Contact interface properties of CMOS image sensor devices were investigated to understand the root cause of a bimodal distribution found in several Kelvin parametric structures. Samples were fabricated using a CVD titanium (Ti) deposition process. The influence of titanium silicide (TiSi2) formation, silicon surface treatment (pre-Ti deposition clean and amorphization), and junction depth on the Kelvin distribution were explored. In addition to standard electrical measurements, TEM and diffraction pattern analysis were also performed. Experimental data presented in this paper show that the bimodal distribution is a result of different TiSi2 phases formation, and that a normal distribution can be achieved by adding an optimized pre-amorphization step before Ti deposition.
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