Abstract
Silicide formation in the Si/Ni/Cr and Si/Pt/Cr tertiary systems was investigated. NiSi and PtSi formation was found to take place at about 350 °C, whilst subsequent CrSi 2 growth on top of these silicides started at approximately 440 °C for NiSi and 500 °C for PtSi. The CrSi 2 formation was found to be linear with time, indicating a reaction-limited process. In both cases the silicide phases stayed well separated, with no evidence of tertiary compound formation. The growth rate of CrSi 2 on epitaxial PtSi was found to be nearly 30% slower than that on non-epitaxial PtSi, whilst the activation energy for CrSi 2 formation on NiSi and PtSi was found to be the same, namely 1.8±0.2 eV for both Si〈100〉 and Si〈111〉 substrates. Auger depth profile measurements indicated that the observed delay times before CrSi 2 formation started to take place, and the large difference in the temperature at which CrSi 2 starts to grow on NiSi and PtSi, could probably be ascribed to oxygen contamination.
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