Abstract
In this paper, we investigate with theory and experiments the performance improvements achievable using bilayer graphene as channel material in field effect transistors for analog applications. Bilayer graphene provides larger output resistance than monolayer graphene, which translates in both higher voltage gain and higher maximum frequency oscillation. To experimentally prove bilayer graphene potential as a channel material, simple circuits have been fabricated and tested, i.e., an amplifier and a frequency doubler. We show that they largely outperform similar circuits built with monolayer-graphene devices.
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