Abstract
Ambipolar organic thin-film transistors with a bilayer structure of poly(3-hexylthiophene) and [6,6]phenyl C(61) butyric acid methyl ester were fabricated using a simple solution-based, contact-film-transfer method. The transistors exhibited balanced electron and hole mobilities of 2.1 x 10(-2) and 1.1 x 10(-2) cm(2) V(-1) s(-1), respectively. Complementary inverters based on two identical ambipolar transistors showed good performance with a gain of 14.
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