Abstract
It has been shown experimentally that in a double‐barrier photodiode structure with a common modulated base region, the spectral characteristics for the cases of cutoff p‐n‐hetero‐ (pGaAs–nCdS) and metal‐semiconductor (m–pGaAs) junctions can have the identical form where the mechanism of formation is determined by the processes occurring in the regions of space charge which are located predominantly in the common (pGaAs) region.
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