Abstract
We describe experimentally the bifurcation diagram of localized lasing states in a cavity soliton laser (CSL). The CSL is based on two coupled semiconductor microcavities, one providing gain and the other providing saturable absorption. We show how single-peak lasing structures bifurcate from homogeneous background, how localized lasing complexes form and how their coexistence can be controlled. The relation between the local bifurcation diagram obtained and distant localized states is discussed.
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