Abstract
Local resistive switching was observed using AFM equipped with conducting tip addressing ∼15 unit cells in high-quality BiFeO3 single crystal grown from a non-stoichiometric melt. The switching appeared under high-vacuum conditions above 340 K and the studies at various temperatures yield the activation energy of 0.74 eV. The field-induced changes in the resistivity were ascribed to the presence of localized oxygen vacancies as a consequence of the mixed valence of Fe2+/Fe3+ ions.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
