Abstract
We present a bifacial interdigitated-back-contact (IBC) silicon solar cell with high bifaciality. Screen-printing and firing technology were used to form electrodes. Al-Ag paste and Ag paste were used for the p- and n-electrodes. The cell efficiencies were 20.5 % (cell area: $10.2\,\mathrm{cm}^{\mathrm {2}}$) and 19.8 % (cell area: $156.25\,\mathrm{cm}^{{2}}$). From the cell analysis by internal quantum efficiency mapping, it was found that the short-circuit current decreased above the screen printed electrodes and back surface field region. To increase the bifacial factor, it is necessary to improve the passivation properties at the BSF region and optimize the electrode design.
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