Abstract
The theory of biexciton (formed from spatially separated electrons and holes) in a nanosystem consisting of double quantum dots (QDs) of germanium synthesized in a silicon matrix is presented. It is shown that the major contribution to the biexciton binding energy is made by the energy of the exchange interaction of electrons with holes and this contribution is much more substantial than the contribution of the energy of Coulomb interaction between the electrons and holes. The position of the biexciton state energy band depends both on the mean radius of the QDs and the distance between their surfaces, which enables one to purposefully control it by varying these parameters of the nanostructure.
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