Abstract
Time-resolved and time-integrated microphotoluminescence spectrometry of exciton andbiexciton transitions in a single self-assembled InGaN quantum dot gives sharp peaks, with thebiexciton 41 meV higher in energy. Theoretical modelling in the Hartree approximation (usinga self-consistent finite difference method) predicts a splitting of up to 51 meV. Time-resolvedmicrophotoluminescence measurements yield a radiative recombination lifetime of1.0 ± 0.1 ns for theexciton and 1.4 ± 0.1 ns for the biexciton. The data can be fitted to a coupled DE rate equation model,confirming that the exciton state is refilled as biexcitons undergo radiative decay.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
