Bidirectional stress on a p-metal–oxide–silicon capacitor

Abstract

Tunneling Fowler–Nordheim bidirectional electron injections were performed on a metal–oxide–silicon capacitor under constant voltage, and the study of generated defects behavior was investigated. It was found that defects generated within the oxide are of the same physical nature and are mainly composed of neutral traps. The charge and discharge of these traps depend on the oxide field polarity. At the oxide–silicon interface, the saturation of interface state generation is maintained by the alternate change of the stress field polarity. This saturation is linked to the Si−δ–H+δ or other Si−δ–A+δ polar bonds at the silicon/oxide interface.