Abstract
Three-dimensional stackable memory frames involving the integration of two-terminal scalable crossbar arrays are expected to meet the demand for high-density memory storage, fast switching speed, and ultra-low power operation. However, two-terminal crossbar arrays introduce an unintended sneak path, which inevitably requires bidirectional nonlinear selectors. In this study, the advanced threshold switching (TS) features of ZnTe chalcogenide material-based selectors provide bidirectional threshold switching behavior, nonlinearity of 104, switching speed of less than 100 ns, and switching endurance of more than 107. In addition, thermally robust ZnTe selectors (up to 400 ℃) can be obtained through the use of nitrogen-annealing treatment. This process can prevent possible phase separation phenomena observed in generic chalcogenide materials during thermal annealing which occurs even at a low temperature of 250 ℃. The possible characteristics of the electrically and thermally advanced TS nature are described by diverse structural and electrical analyses through the Poole–Frankel conduction model.
Highlights
Three-dimensional stackable memory frames involving the integration of two-terminal scalable crossbar arrays are expected to meet the demand for high-density memory storage, fast switching speed, and ultra-low power operation
Systematic structural and electrical analyses of ZnTe thin films are done by X-ray diffraction (XRD), X-ray photoemission spectroscopy (XPS), and DC/pulse electrical characteristics to aid interpretation of the experimental findings using the Poole–Frankel conduction model
We address the performance and thermal stability of simple binary ZnTe selectors
Summary
Three-dimensional stackable memory frames involving the integration of two-terminal scalable crossbar arrays are expected to meet the demand for high-density memory storage, fast switching speed, and ultra-low power operation. Thermally robust ZnTe selectors (up to 400 °C) can be obtained through the use of nitrogen-annealing treatment This process can prevent possible phase separation phenomena observed in generic chalcogenide materials during thermal annealing which occurs even at a low temperature of 250 °C. The OTS-based selector utilizes transient threshold switching (TS) behavior above a critical electric field level and shows promise for highly advanced nonlinearity and prominent endurance/retention features[12], which can possibly facilitate the realization of 3D high-density crossbar arrays. The OTS-based selectors exhibit extremely large threshold voltages, which severely limit the device performances It requires materials with complex compositions, including arsenic as a dopant. The incorporation of a suitable nitrogen post annealing approach verifies the thermally robust electrical responses of ZnTe selectors even at a high annealing temperature of 400 °C, which suggests the efficient protection of annealing-dependent phase separation phenomena of ZnTe active layer
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