Abstract
By incorporating a 1550 nm laser diode, bidirectional laser triggering was investigated in a two-terminal planar device based on vanadium dioxide (VO2) thin film grown by sol-gel method. A specific bias voltage range enabling the bidirectional laser triggering was experimentally found from the current-voltage characteristics of the VO2-based device, which was measured in a current-controlled mode. At a bias voltage selected within the range, 10 mA bidirectional triggering was implemented with a maximum amplitude switching ratio of ~68.2, and the transient responses of light-triggered currents were also analyzed.
Highlights
A vanadium dioxide (VO2) thin film has a reversible phase transition (PT) between an insulating state and a metallic state, which can be induced by temperature [1], pressure [2], light [3], and so on
By incorporating a 1550 nm laser diode, bidirectional laser triggering was investigated in a two-terminal planar device based on vanadium dioxide (VO2) thin film grown by sol-gel method
A specific bias voltage range enabling the bidirectional laser triggering was experimentally found from the current-voltage characteristics of the VO2-based device, which was measured in a current-controlled mode
Summary
A vanadium dioxide (VO2) thin film has a reversible phase transition (PT) between an insulating state and a metallic state, which can be induced by temperature [1], pressure [2], light [3], and so on. 10 mA bidirectional laser triggering with a maximum amplitude switching ratio of ~68.2 was demonstrated in the VO2 device that was biased at a DC voltage chosen within the above bias voltage range. This high switching contrast could be obtained by increasing the on-state current (after triggering the phase transition of VO2) with the use of VO2 devices with parallel conducting layers. The transient responses of light-triggered currents were analyzed
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