Abstract
ABSTRACTThe growth of (001)-textured, biaxially-aligned yttria-stabilized zirconia (YSZ) intermediate layers on amorphous or randomly-oriented polycrystalline substrates is desirable for subsequent YBa2Cu3O7–x (YBCO) c-axis thin film growth. Laser deposition of YSZ on polycrystalline metal substrates (Haynes Alloy #230) in 1.0 millitorr oxygen at 70°C produces partial (001) texture but no alignment of in-plane axes. Highly-textured biaxially-aligned layers are obtained by using an ion beam to assist growth. Similar layers are obtained on amorphous silica and polycrystalline alumina substrates. The effects of ion-beam parameters including incident angle, source gas, and beam voltage and current are presented. Highly c-axis-oriented, biaxiallyaligned YBCO thin films have been deposited in situ on these YSZ layers, with Tc(R=0) ∼ 92K and Jc(77K) = 6 × 105 A/cm2. Angular magnetoresistance data shows a dip in resistance with magnetic field normal to the film, in contrast to films grown epitaxially on single crystal substrates, which have maximum resistance with field normal.
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