Abstract
In this work, the effects of biased irradiation on solution-processed and atomic layer deposited (ALD) AlOx thin films MOS capacitors were investigated by an on-site technique. The devices were irradiated by a 662-KeV Cs137 γ-ray radiation source under different positive/negative gate biases. The radiation time was up to 105 s and the total dose was around 92 Gy. It has been found that radiation could result in reversibility of flat-band voltage shifts (ΔVFB) of solution-processed AlOx MOS capacitors, which were further analyzed through calculating the radiation induced oxide traps (ΔNot) in AlOx thin film and interface traps at AlOx/Si interface (ΔNit). Additionally, solution-processed AlOx MOS capacitors exhibit more radiation induced charges compared to those fabricated by ALD, which indicates that solution-processed AlOx thin films contain abundant precursor impurities and bonded oxygen.
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