Abstract
The 2–fold surface of the icosahedral (i-)Ag–In–Yb quasicrystal has been investigated using scanning tunnelling microscopy (STM). STM data reveals a bias-voltage dependency. At high positive bias, bright protrusions are observed. At negative bias, new protrusions appear while the size of the original protrusions decreases. The STM features at both positive and negative bias polarities can be related to atomic planes intersecting the centre of Tsai-type clusters (the building blocks of the bulk structure). The bias-dependency can be explained by a change in contribution in tunnelling current from Yb and Ag/In, as expected from density of states calculations.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
