Abstract
The dependence of the tunnel magnetoresistance (TMR) effect on bias voltage is based on the fabrication condition of the SrTiO3 (STO) barrier in spin-valve type MnIr/NiFe/Co90Fe10/SrTiO3/La0.7Sr0.3MnO3 (LSMO). In a TMR junction having an STO barrier deposited at a substrate temperature (Ts) of 500°C in a pure Ar atmosphere, the TMR ratio decreased symmetrically with respect to the bias voltage direction. When the STO barrier was deposited at higher Ts and under higher O2 partial pressure, the TMR junction exhibited a more asymmetrical dependence. The non-stoichiometry of STO may modify the band structure of interfacial LSMO and reduce the asymmetry of the bias voltage dependence.
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