Bias Voltage Dependence of Sensing Characteristics in Tunneling Magnetoresistance Sensors.

Abstract

One of the characteristic features of tunneling magnetoresistance (TMR) sensors is a strong influence of bias voltage on tunneling current. Since fundamental sensing characteristics of the sensors are primarily determined by the tunneling current, the bias voltage should impact these characteristics. Previous research has indeed showed the influence of the bias voltage on the magnetic field detection and sensitivity. However, the effect has not been investigated for nonlinearity and hysteresis and the influence of bias voltage polarity has not yet been addressed. Therefore, this paper systematically investigates the dependence of field sensitivity, nonlinearity, hysteresis and magnetic field detection of CoFeB/MgO/CoFeB-based magnetoresistance sensors on bias voltage magnitude and polarity. The sensitivity and field detection of all sensors improved significantly with the bias, whereas the nonlinearity and hysteresis deteriorated. The sensitivity increased considerably (up to 32 times) and linearly with bias up to 0.6 V. The field detection also decreased substantially (up 3.9 times) with bias and exhibited the minimum values for the same magnitude under both polarities. Significant and linear increases with bias were also observed for nonlinearity (up to 26 times) and hysteresis (up to 33 times). Moreover, not only the voltage magnitude but also the polarity had a significant effect on the sensing characteristics. This significant, linear and simultaneous effect of improvement and deterioration of the sensing characteristics with bias indicates that both bias voltage magnitude and polarity are key factors in the control and modification of these characteristics.