Bias-voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions

Abstract

Spin-transfer torque allows the magnetization of nanopillar devices to be switched electrically. Incorporating asymmetries into the design of such a device generates a linear out-of-plane torque component that could help prevent the unwanted spontaneous reversal of the nanopillar’s magnetization. Spin-transfer torque1,2 (STT) allows the electrical control of magnetic states in nanostructures3,4,5. The STT in magnetic tunnel junctions (MTJs) is of particular importance owing to its potential for device applications6,7. It has been demonstrated8,9,10,11 that the MTJ has a sizable perpendicular STT ( , field-like torque), which substantially affects STT-driven magnetization dynamics. In contrast to symmetric MTJs where the bias dependence of is quadratic8,9,10,12,13, it is theoretically predicted that the symmetry breaking of the system causes an extra linear bias dependence11. Here, we report experimental results that are consistent with the predicted linear bias dependence in asymmetric MTJs. The linear contribution is quite significant and its sign changes from positive to negative as the asymmetry is modified. This result opens a way to design the bias dependence of the field-like term, which is useful for device applications by allowing, in particular, the suppression of the abnormal switching-back phenomena.