Bias voltage dependence of magnetic tunnel junctions comprising double barriers and amorphous NiFeSiB layers

Abstract

A double-barrier magnetic tunnel junction (DMTJ) comprising an amorphous ferromagnetic NiFeSiB was investigated to reduce bias voltage dependence of tunneling magnetoresistance (TMR) ratio. The typical DMTJ structures were Ta45∕Ru9.5∕IrMn10∕CoFe7∕AlOx∕free layer7∕AlOx∕CoFe7∕IrMn10∕Ru60 (in nanometers). Various free layers such as CoFe 7, NiFeSiB 7, CoFe3.5∕NiFeSiB3.5, and NiFeSiB3.5∕CoFe3.5 were prepared and compared. The NiFeSiB-used DMTJ shows a low root-mean-square surface roughness of 0.17 nm, a resistance of about 860Ω, a Vh (voltage where the TMR ratio becomes half of its nonbiased value) of 1.1 V, and a high junction breakdown voltage of 2.0 V. The DMTJ with an amorphous NiFeSiB free layer offers smooth surface roughness resulting in reduced interlayer coupling field and bias voltage dependence.