Abstract
A δ-doped In0.28Ga0.72As/GaAs/In0.24Ga0.76As/GaAs high electron mobility transistor (HEMT) with a thickness-graded superlattice spacer exhibiting bias-tunable multiple-transconductance performance has been successfully fabricated by molecular beam epitaxy (MBE). As compared to a conventional HEMT structure with a single undoped spacer layer, the present superlattice spacer, which accommodates the lattice-mismatch-induced strain, provides improvement of 31% and 43% on electron mobility and the two-dimensional electron gas (2DEG) concentration-mobility product, respectively. In addition, the device demonstrates bias-tunable multiple-transconductance plateaus due to modulation of the 2DEG concentration and mobility product by real-space transfer at high channel voltage. The distinguished device characteristics of the present structure are promising for a high-speed analog-to-digital converter (ADC) or multiple-state quantizer applications.
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