Abstract
We performed a physical and electrical characterization of the defects that would cause negative and positive bias temperature instability (NBTI, PBTI) in gate stacks that use SiO2, plasma-nitrided SiO2, HfSiON, and HfSiON with Ni- silicide electrodes. The characterization shows that the influence of impurities, damages and mechanical stress, derived from the newly incorporated materials and process technologies on the insulator bulk and insulator/Si interface must be suppressed to cope with the problems of NBTI and PBTI in the advanced gate stacks.
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