Abstract
In small devices, Bias Temperature Instability (BTI) produces discrete threshold voltage (V T ) shifts, which are attributed to the charge and discharge of individual defects. Among others, the Probabilistic Defect Occupancy (PDO) model describes the BTI degradation of the device from these phenomena at atomic level. Since BTI related VT shifts could impact circuit performance, they will have to be accounted for during the design phase. In this work, the PDO model will be reviewed and the parameter extraction described. It will be shown that, when the model is introduced into RELAB, a new reliability simulation tool, the BTI effects in the circuit performance can be evaluated.
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