Bias Stress Stability of Solution-Processed Nano Indium Oxide Thin Film Transistor.

Rihui Yao,Xiao Fu,Wei Xu,Xiuhua Cao,Wanwan Li,Shangxiong Zhou,Honglong Ning,Biao Tang,Junbiao Peng,Jinglin Wei

doi:10.3390/mi12020111

Abstract

In this paper, the effects of annealing temperature and other process parameters on spin-coated indium oxide thin film transistors (In2O3-TFTs) were studied. The research shows that plasma pretreatment of glass substrate can improve the hydrophilicity of glass substrate and stability of the spin-coating process. With Fourier transform infrared (FT-IR) and X-ray diffraction (XRD) analysis, it is found that In2O3 thin films prepared by the spin coating method are amorphous, and have little organic residue when the annealing temperature ranges from 200 to 300 °C. After optimizing process conditions with the spin-coated rotating speed of 4000 rpm and the annealing temperature of 275 °C, the performance of In2O3-TFTs is best (average mobility of 1.288 cm2·V−1·s−1, Ion/Ioff of 5.93 × 106, and SS of 0.84 V·dec−1). Finally, the stability of In2O3-TFTs prepared at different annealing temperatures was analyzed by energy band theory, and we identified that the elimination of residual hydroxyl groups was the key influencing factor. Our results provide a useful reference for high-performance metal oxide semiconductor TFTs prepared by the solution method.

Highlights

With the active matrix liquid crystal display (AMLCD) and active matrix organic light-emitting diodes (AMOLED) gradually occupying the mainstream position in the display field [1,2,3,4], metal oxide thin film transistors (MOS-TFTs) have been widely studied due to their high mobility, high light transmittance, low processing temperature and low processing cost [3,4,5,6,7,8,9]
Easy to compound with donor-like vacancies, but directly formed channel current underas shown resulting in Figurein8a, the actual concentration will be reduced, so a higher Vth is voltage, a negative
The results show that plasma treatment can significantly improve the spreading of In2O3 precursor solution on the substrate

Summary

Introduction

With the active matrix liquid crystal display (AMLCD) and active matrix organic light-emitting diodes (AMOLED) gradually occupying the mainstream position in the display field [1,2,3,4], metal oxide thin film transistors (MOS-TFTs) have been widely studied due to their high mobility, high light transmittance, low processing temperature and low processing cost [3,4,5,6,7,8,9]. The phase surface treatment, 35 μL of In2O3 precursor solution was added dropwise to the singlecomposition of In2 O3 thin films was investigated by different annealing methods. On this crystal silicon (CAS No.: 7440-21-3), and spin coated with a homogenizer Methods deposition of In2O3 thin films, an Al source and drain electrodes were formed by magneA semiconductor precursor solution was prepared using Indium nitrate hydrate tron sputtering through a shadow mask. Semiconductor parameter analyzers (Agilent 4155c, Agilent, Santa Clara, CA, USA) was used under an ambient atmosphere to evaluate the electrical characteristics of TFTs

Figure

Ofilms

Atomic force microscopy images m2O

O3 -TFTs were

Conclusions