Bias Stress Stability and Hysteresis in Elastomeric Dielectric Based Solution Processed OFETs

Abstract

Organic field-effect transistors (OFETs) are an integral part of future organic electronics and in the past few years a tremendous improvement in its performance is observed. However, considering the implementation in practical devices, OFETs need further improvement in areas like electrical and environmental stability. The present study investigates the various factors affecting bias stress and hysteresis behaviour of an elastomeric gate dielectric called poly (dimethylsiloxane) (PDMS) based solution-processed OFETs. The bias stress and hysteresis behaviour are found to be highly correlated to the choice of dielectric, semiconductor materials and different atmospheric conditions. The OFETs exhibit anomalous bias stress behaviour under various operating conditions which is mainly attributed to the slow polarization of PDMS. However, device stability is not compromised. The hysteresis in OFETs is found to be controllable by maintaining desirable operating conditions and by the use of proper surface treatments.