Abstract
In this paper the effect of C-, Be- and Zn-doped GaAs base on the bias stress reliability of n-p-n AlGaAs GaAs microwave HBTs, fabricated under an identical processing technology and layout design, have been investigated. It was found that, following 24 hours of identical bias stress at room temperature, both Be- and Zn-doped devices exhibited current gain degradation of 68 and 57%, respectively, compared with only 7% for the C-doped device. The increase in the emitter/base turn-on voltage in the degraded devices is attributed to the p-n junction displacement.
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