Abstract
We report the effect of bias stress on the drain current and threshold voltage of n-channel thin-film transistors based on solution processed In2O3 layers. Application of a positive gate bias for variable time-periods led to displacements of the transfer curves in the positive gate bias direction. On switching off the gate bias, the transfer curves returned close to their pre-stress state on a timescale similar to that when the gate bias was switched on. The time dependence of the threshold voltage shift is described well by a stretched-exponential model. The temporal behaviour of the threshold voltage shifts is consistent with charge trapping as the dominant effect, although some defect formation cannot be ruled out.
Highlights
In recent years, transparent oxide thin film transistors (TFTs) have been extensively studied due to their high-performance and potential use in various low-effective technological application [1,2,3,4,5,6]
Recent investigations demonstrated the key properties of oxide TFTs, including device mobility [6], film uniformity over large areas [7], high optical transparency in the visible region [8], low off-current and compatibility with various fabrication methods [9, 10]
atomic force microscope (AFM) measurements were performed in intermittent contact mode to examine the surface morphology, as shown in figures 1(a) and (b), giving a root-mean-square surface roughness
Summary
Transparent oxide thin film transistors (TFTs) have been extensively studied due to their high-performance and potential use in various low-effective technological application [1,2,3,4,5,6]. Recent investigations demonstrated the key properties of oxide TFTs, including device mobility [6], film uniformity over large areas [7], high optical transparency in the visible region [8], low off-current and compatibility with various fabrication methods [9, 10]. A number of metal-oxide based TFTs such as indium oxide (In2O3), indium zinc oxide (IZO), and indium gallium zinc oxide (IGZO) have demonstrated high mobilities and reasonable device performance at low or room temperature, using different device dimensions and various fabrication methods [13,14,15,16]. One of the key issues for In2O3 thin-film devices is the stability of the threshold voltage after prolonged application of gate voltage, referred to as bias stress [24, 25]
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