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Abstract
A tricolor infrared detector with bias-selectable peaks based on tunneling quantum dot infrared photodetector (T-QDIP) architecture is demonstrated. Photoabsorption takes place in In0.4Ga0.6As quantum dots (QDs) and the excited electrons are collected by resonant tunneling across an Al0.2Ga0.8As∕In0.1Ga0.9As∕Al0.2Ga0.8As double barrier coupled to the QDs. The field dependent tunneling for excited carriers in T-QDIP is used to select the operating wavelength. This T-QDIP detector exhibits three distinct response peaks at 4.5∕4.9±0.05, 9.5±0.05, and 16.9±0.1μm up to 80K. The peak detectivity is in the range of (1.0–6.0)×1012Jones at 50K. Bias polarity allows the selection of either the 9.5μm or the 16.9μm peak.
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