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Abstract
We propose that bias-modulated graphene-nanocrystallites (GNs) grown vertically can enhance the photoelectric property of carbon film coated on n-Si substrate. In this work, GN-embedded carbon (GNEC) films were deposited by the electron cyclotron resonance (ECR) sputtering technique. Under a reverse diode bias which lifts the Dirac point of GNs to a higher value, the GNEC film/n-Si device achieved a high photocurrent responsivity of 0.35 A/W. The bias-modulated position of the Dirac point resulted in a tunable ON/OFF ratio and a variable spectral response peak. Moreover, due to the standing structured GNs keeping the transport channels, a response time of 2.2 μs was achieved. This work sheds light on the bias-control wavelength-sensitive photodetector applications.
Highlights
Photoelectric sensors are widely used in optical communication, infrared ranging, environmental monitoring, military security inspection, biomedical imaging, and scientific research [1,2,3,4]
We report the photo-electric behavior of GN-embedded carbon (GNEC) films coated on n-Si. The Ef (Si) substrates prepared by electron cyclotron resonance (ECR) plasma sputtering technology under bias voltage modulation
A finger-shaped electrode was deposited on the surface of the GNEC film by UV lithography, and a 50-nm flat gold
Summary
Photoelectric sensors are widely used in optical communication, infrared ranging, environmental monitoring, military security inspection, biomedical imaging, and scientific research [1,2,3,4]. Graphene is a promising candidate for new-generation photodetectors due to its outstanding photoelectric properties [5,6]. The combination of graphene and silicon, with their known conductive behaviors, offers new unique properties and draws great research attention [7,8]. Plane-graphene photodetectors present low photocurrent responsivity due to the lack of trapping centers in plane-graphene, which causes the rapid recombination of photoexcited carriers. The effective areas of the reported graphene/silicon photodetector are usually tens of μm. A method to mass-produce a photodiode with low cost and high responsivity is highly desired
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