Abstract
In order to evaluate the influence of bias conditions on ionizing radiation effects for PNP bipolar junction transistors (BJTs), the 110keV electrons' irradiations were performed and different electrical parameters were measured in-situ for 3CG130 PNP BJTs with different bias conditions during the exposure. Based on the experimental results, it is clear that the bias condition affects the ionization damage level on PNP BJTs, which is caused by 110keV electrons' irradiations. The PNP transistors under reverse/forward bias of emitter–base junction exhibit greater/lower degradation than those under zero bias at a given irradiation fluence.
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