Abstract
Thin films with high nucleation of Nanocrystalline Diamond (NCD) and good adherence were deposited on Ti6Al4V alloy by microwave-assisted technique. Nucleation density of 5.0 ? 109 part/cm? was achieved by using a bias voltage of -400 V applied during 5 min. Diamond films were deposited on polished and jetted substrates after bias process and showed a good quality and a total residual stress of -2.8 GPa and -1.4 GPa, respectively. Diamond/Ti6Al4V adherence was investigated as a function of substrate preparation and film growth time using Rockwell indenter with loads up to 2451 N. Films deposited on jetted substrates presented the best adhesion.
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