Abstract
The effect of bias enhanced growth and nucleation (BEN-BEG) process on the synthesis of highly conducting diamond based nano-carbon composite (NCC-D) materials was systematically investigated. Transmission electron microscopy (TEM) illustrated that NCC-D films mainly consist of wire-like diamond grains encased in a nanographitic sheath, which formed conduction channels for efficient electron transport and hence led to excellent electrical conductivity and EFE properties of these films. Increasing the growth time enhances the electrical conductivity to a high level of σ=987S/cm and the EFE properties of the NCC-D films is also markedly enhanced. The NCC-D films achieved a low turn-on field of 2.86V/μm with high EFE current density of 1.50mA/cm2 (at 5.61V/μm). These characteristics are better than those of other kinds of UNCD films and are essential for diamond-based electronics devices and biosensors. The salient features of the BEN-BEG process for growing NCC-D materials is that the diamond with wire-like granular structure can be obtained at low temperature of 450°C without the need of external substrate heating.
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