Abstract
PbTiO3 thin films have been prepared by rf sputtering under bias application to the substate. Relationships of the plasma potential to the bias voltage have been discussed. Some of the thin films prepared under the substrate bias are highly-oriented and the dielectric properties become better with increase of the bias voltage. The film surface is very smooth because the deposition rate of the horizontal face is high but the inclined plane is etched off very much.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
