Abstract
We have studied the change in surface reconstruction of Si(001) after adsorption of 1 L trimethylagllium, Ga(CH3)3 (TMGa) on Si(001). The investigations were carried out by elevated temperature scanning tunneling microscopy (STM) and electron diffraction (LEED, RHEED). Dosing TMGa at a substrate temperature of 500°C leads to a c(4 × 4) surface reconstruction which develops preferentially at trench defects and step edges. These isolated patches grow over time and eventually cover the entire surface. Bias dependent imaging shows that electronic effects dominate the contrast in the STM empty states images. Electron diffraction (LEED, RHEED) confirmed the c(4 × 4) surface reconstruction. Based on our STM images and the results of the electron diffraction experiments, we propose a structural model for the Si(001) c(4 × 4) reconstructed surface after adsorption of TMGa.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
