Abstract
1 /spl mu/m gate-length AlGaN/GaN modulation doped field effect transistors (MODFET's) have been fabricated on an insulating GaN buffer layer for better carrier confinement. These devices demonstrate simultaneously high current levels (>500 mA/mm), excellent pinch-off and high gate-drain breakdown voltages (220 V for 3 /spl mu/m gate-drain spacing). In contrast to their GaAs counterparts, the current-gain cutoff frequency of the AlGaN/GaN devices shows little degradation at high drain voltage biases. A power-gain cutoff frequency of 19 GHz is obtained at 100 V. ACW power density of 1.57 W/mm at 4 Ghz is also achieved when biased at 28 V and 205 mA/mm.
Published Version
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